In this talk, we present the design and device results of strained-layer InGaAs-GaAs-InGaP separate confinement heterostructure lasers emitting at 1.14 /spl mu/m fabricated on a ternary In/sub 0.03/Ga/sub 0.97/As substrate. The InGaAs substrate used for the devices in this talk was measured by FTIR spectroscopy to have an indium molar percent of 3.03%.


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    Title :

    1.14 /spl mu/m strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition


    Contributors:
    Jones, A.M. (author) / Kluender, J.F. (author) / Roh, S.D. (author) / Moore, A.H. (author) / Bonner, W.A. (author) / Coleman, J.J. (author)


    Publication date :

    1996-01-01


    Size :

    172376 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English