This study demonstrates a GaAs/sub 0.8/Sb/sub 0.2/-GaAs RCE SACM APD, with a peak quantum efficiency of 93% at 1.06 /spl mu/m. The device structure is grown on a (100) semi-insulating GaAs substrate using MBE. Devices are fabricated by defining 160 /spl mu/m mesas using wet chemical etching. Device I-V characteristics are measured at room temperature under white light illumination.


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    Title :

    GaAsSb resonant-cavity-enhanced avalanche photodiode operating at 1.06 /spl mu/m


    Contributors:
    Sidhu, R. (author) / Chen, H. (author) / Duan, N. (author) / Karve, G.V. (author) / Campbell, J.C. (author) / Holmes, A.L. (author)


    Publication date :

    2004-01-01


    Size :

    115446 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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