This study demonstrates a GaAs/sub 0.8/Sb/sub 0.2/-GaAs RCE SACM APD, with a peak quantum efficiency of 93% at 1.06 /spl mu/m. The device structure is grown on a (100) semi-insulating GaAs substrate using MBE. Devices are fabricated by defining 160 /spl mu/m mesas using wet chemical etching. Device I-V characteristics are measured at room temperature under white light illumination.
GaAsSb resonant-cavity-enhanced avalanche photodiode operating at 1.06 /spl mu/m
2004-01-01
115446 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2004
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