This study demonstrates a GaAs/sub 0.8/Sb/sub 0.2/-GaAs RCE SACM APD, with a peak quantum efficiency of 93% at 1.06 /spl mu/m. The device structure is grown on a (100) semi-insulating GaAs substrate using MBE. Devices are fabricated by defining 160 /spl mu/m mesas using wet chemical etching. Device I-V characteristics are measured at room temperature under white light illumination.


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    Titel :

    GaAsSb resonant-cavity-enhanced avalanche photodiode operating at 1.06 /spl mu/m


    Beteiligte:
    Sidhu, R. (Autor:in) / Chen, H. (Autor:in) / Duan, N. (Autor:in) / Karve, G.V. (Autor:in) / Campbell, J.C. (Autor:in) / Holmes, A.L. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    115446 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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