In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-speed, low-noise resonant-cavity avalanche photodiodes


    Beteiligte:
    Hui Nie, (Autor:in) / Anselm, K.A. (Autor:in) / Hu, C. (Autor:in) / Streetman, B.G. (Autor:in) / Campbell, J.C. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    261725 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Speed, Low-Noise Resonant-Cavity Avalanche Photodiodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    High Speed Resonant Cavity Enhanced Schottky Photodiodes

    Islam, S. / Oezbay, E. / Aytur, O. et al. | British Library Conference Proceedings | 1997


    Low noise avalanche photodiodes

    David, J.P.R. | IEEE | 2005


    Low noise avalanche photodiodes

    David, J.P.R. / Rees, G.J. | IEEE | 2001