To achieve high density vertical cavity surface emitting (VCSEL) laser arrays, the material system and device structure must be optimized. Here we employ strain-balanced In/sub 0.27/Ga/sub 0.73/As quantum wells designed to emit at 1.06 /spl mu/m.
Uniform selectively oxidized 2-dimensional VCSEL arrays for VLSI photonics
1997-01-01
261011 byte
Conference paper
Electronic Resource
English
Uniform Selectively Oxidized 2-Dimensional VCSEL Arrays for VLSI Photonics
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