To achieve high density vertical cavity surface emitting (VCSEL) laser arrays, the material system and device structure must be optimized. Here we employ strain-balanced In/sub 0.27/Ga/sub 0.73/As quantum wells designed to emit at 1.06 /spl mu/m.


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    Title :

    Uniform selectively oxidized 2-dimensional VCSEL arrays for VLSI photonics


    Contributors:
    Choquette, K.D. (author) / Hou, H.Q. (author) / Geib, K.M. (author) / Hammons, B.E. (author)


    Publication date :

    1997-01-01


    Size :

    261011 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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