The apparent temperature stability of GaInNAs-based lasers is attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.


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    Title :

    Intrinsic temperature sensitivities of 1.3 /spl mu/m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers


    Contributors:
    Sweeney, S.J. (author) / Fehse, R. (author) / Adams, A.R. (author) / Riechert, H. (author)


    Publication date :

    2003-01-01


    Size :

    140941 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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