The apparent temperature stability of GaInNAs-based lasers is attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.


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    Titel :

    Intrinsic temperature sensitivities of 1.3 /spl mu/m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers


    Beteiligte:
    Sweeney, S.J. (Autor:in) / Fehse, R. (Autor:in) / Adams, A.R. (Autor:in) / Riechert, H. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    140941 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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