The apparent temperature stability of GaInNAs-based lasers is attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.
Intrinsic temperature sensitivities of 1.3 /spl mu/m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers
01.01.2003
140941 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 2002
|British Library Conference Proceedings | 2002
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