Summary form only given. Here we present results for a short-wavelength type II quantum well laser (T2QWL) structure which exhibits lasing up to temperatures well above ambient. Until now, only the intersubband-based quantum cascade laser had displayed stimulated emission at 3 /spl mu/m above 300 K. An undoped InAs-GaInSb-InAs-AlSb MQW wafer was grown by MBE.


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    Title :

    Room-temperature mid-IR semiconductor lasers


    Contributors:
    Malin, J.I. (author) / Felix, C.L. (author) / Meyer, J.R. (author) / Hoffman, C.A. (author) / Pinto, J.F. (author) / Lin, C.-H. (author) / Chang, P.C. (author) / Murry, S.J. (author) / Yang, R.Q. (author) / Pei, S.-S. (author)


    Publication date :

    1996-01-01


    Size :

    126693 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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