Summary form only given. Here we present results for a short-wavelength type II quantum well laser (T2QWL) structure which exhibits lasing up to temperatures well above ambient. Until now, only the intersubband-based quantum cascade laser had displayed stimulated emission at 3 /spl mu/m above 300 K. An undoped InAs-GaInSb-InAs-AlSb MQW wafer was grown by MBE.
Room-temperature mid-IR semiconductor lasers
1996-01-01
126693 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Room-Temperature Mid-IR Semiconductor Lasers
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