Summary form only given. Here we present results for a short-wavelength type II quantum well laser (T2QWL) structure which exhibits lasing up to temperatures well above ambient. Until now, only the intersubband-based quantum cascade laser had displayed stimulated emission at 3 /spl mu/m above 300 K. An undoped InAs-GaInSb-InAs-AlSb MQW wafer was grown by MBE.


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    Titel :

    Room-temperature mid-IR semiconductor lasers


    Beteiligte:
    Malin, J.I. (Autor:in) / Felix, C.L. (Autor:in) / Meyer, J.R. (Autor:in) / Hoffman, C.A. (Autor:in) / Pinto, J.F. (Autor:in) / Lin, C.-H. (Autor:in) / Chang, P.C. (Autor:in) / Murry, S.J. (Autor:in) / Yang, R.Q. (Autor:in) / Pei, S.-S. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    126693 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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