We have described numerical results of a high-bandwidth design of an InGaAs/InP APD without sacrifice in reliability and manufacturability. A thinner multiplication layer reduces avalanche time, and the optimised absorption layer thickness manages the speed trade-off between (i) the high avalanche gain required of a thin absorption layer and (ii) the hole and secondary electron transit times of a thick absorption layer. One-dimensional simulation suggests the possibility of good control of edge breakdown with an optimized design. Substantial further improvement in bandwidth is likely to require alternate design approaches such as a different material (e.g., Si or InAlAs) for the multiplication region and/or an optical waveguide structure.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Bandwidth simulations of 10 Gb/s avalanche photodiodes


    Contributors:
    Jie Yao, (author) / Loi, K.K. (author) / Baret, P. (author) / Kwan, S. (author) / Itzler, M.A. (author)


    Publication date :

    2001-01-01


    Size :

    226222 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    ThF4 Bandwidth Simulations of 10Gb/s Avalanche Photodiodes

    IEEE | British Library Conference Proceedings | 2001


    Gain-Bandwidth Product Optimization of Heterostructure Avalanche Photodiodes

    Kwon, O.-H. / Hayat, M. M. / Campbell, J. C. et al. | British Library Online Contents | 2005


    Superlattice Avalanche Photodiodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Superlattice avalanche photodiodes

    Kagawa, T. | IEEE | 1997