We have described numerical results of a high-bandwidth design of an InGaAs/InP APD without sacrifice in reliability and manufacturability. A thinner multiplication layer reduces avalanche time, and the optimised absorption layer thickness manages the speed trade-off between (i) the high avalanche gain required of a thin absorption layer and (ii) the hole and secondary electron transit times of a thick absorption layer. One-dimensional simulation suggests the possibility of good control of edge breakdown with an optimized design. Substantial further improvement in bandwidth is likely to require alternate design approaches such as a different material (e.g., Si or InAlAs) for the multiplication region and/or an optical waveguide structure.
Bandwidth simulations of 10 Gb/s avalanche photodiodes
01.01.2001
226222 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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