We have described numerical results of a high-bandwidth design of an InGaAs/InP APD without sacrifice in reliability and manufacturability. A thinner multiplication layer reduces avalanche time, and the optimised absorption layer thickness manages the speed trade-off between (i) the high avalanche gain required of a thin absorption layer and (ii) the hole and secondary electron transit times of a thick absorption layer. One-dimensional simulation suggests the possibility of good control of edge breakdown with an optimized design. Substantial further improvement in bandwidth is likely to require alternate design approaches such as a different material (e.g., Si or InAlAs) for the multiplication region and/or an optical waveguide structure.


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    Titel :

    Bandwidth simulations of 10 Gb/s avalanche photodiodes


    Beteiligte:
    Jie Yao, (Autor:in) / Loi, K.K. (Autor:in) / Baret, P. (Autor:in) / Kwan, S. (Autor:in) / Itzler, M.A. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    226222 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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