All-optical gate switching with a high extinction ratio was characterized. A faster and a slower decay component were observed. The slower one will be suppressed with optimized quantum well structures and properly selected operation wavelengths.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Time-Resolved Characterization of All-Optical Switch Utilizing GaN Intersubband Transition


    Contributors:
    Iizuka, N. (author) / Kaneko, K. (author) / Suzuki, N. (author)


    Publication date :

    2005-01-01


    Size :

    151848 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Ultrafast all optical modulation based on intersubband transition in semiconductor quantum wells

    Asano, T. / Yoshizawa, S. / Noda, S. et al. | British Library Online Contents | 2001



    Ultrafast All-optical Modulation by GaN Intersubband Transition in a Ridge Waveguide

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    Ultrafast (∼1THz) 1.55um All-Optical Switch Using Intersubband Absorption in InGaAs/AlAs/AlAsSb Coupled Quantum Wells

    Akiyama, T. / Georgiev, N. / Mozume, T. et al. | British Library Conference Proceedings | 2001