All-optical gate switching with a high extinction ratio was characterized. A faster and a slower decay component were observed. The slower one will be suppressed with optimized quantum well structures and properly selected operation wavelengths.
Time-Resolved Characterization of All-Optical Switch Utilizing GaN Intersubband Transition
2005-01-01
151848 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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