All-optical gate switching with a high extinction ratio was characterized. A faster and a slower decay component were observed. The slower one will be suppressed with optimized quantum well structures and properly selected operation wavelengths.


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    Titel :

    Time-Resolved Characterization of All-Optical Switch Utilizing GaN Intersubband Transition


    Beteiligte:
    Iizuka, N. (Autor:in) / Kaneko, K. (Autor:in) / Suzuki, N. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    151848 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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