An all-optical gate switch utilizing intersubband transition in GaN/AlN quantum wells was fabricated by MBE re-growth on an MOCVD-grown GaN. The extinction ratio of 10 dB was achieved with the gate width of 240 fs.
Sub-picosecond all-optical switch with extinction ratio of 10 dB utilizing GaN intersubband transition
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 731-733 Vol. 1
2005-01-01
451315 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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