The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.
Electrically injected photonic bandgap microcavity light sources
2001-01-01
258886 byte
Conference paper
Electronic Resource
English
MJ2 Electrically Injected Photonic Bandgap Microcavity Light Sources
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