The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.


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    Title :

    Electrically injected photonic bandgap microcavity light sources


    Contributors:
    Bhattacharya, P. (author) / Zhou, W.D. (author) / Sabarinathan, J. (author) / Yu, P.C. (author)


    Publication date :

    2001-01-01


    Size :

    258886 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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