The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.
Electrically injected photonic bandgap microcavity light sources
01.01.2001
258886 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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