The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.


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    Titel :

    Electrically injected photonic bandgap microcavity light sources


    Beteiligte:
    Bhattacharya, P. (Autor:in) / Zhou, W.D. (Autor:in) / Sabarinathan, J. (Autor:in) / Yu, P.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    258886 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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