We fabricated a 1200 nm range GaInNAs/GaAs quantum wells vertical cavity surface emitting laser grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a record low threshold current density of 2.6 kA/cm/sup 2/.


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    Title :

    Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW


    Contributors:
    Makino, S. (author) / Miyamoto, T. (author) / Kageyarna, T. (author) / Ikenaga, Y. (author) / Nishiyama, N. (author) / Matsutani, A. (author) / Koyama, F. (author) / Iga, K. (author)


    Publication date :

    2001-01-01


    Size :

    170330 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Room Temperature Continuos-Wave Operation of GaInN-As/GaAs VCSELs Grown by Chemical Beam Epitaxy with Output Power Exceeding 1mW

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