We fabricated a 1200 nm range GaInNAs/GaAs quantum wells vertical cavity surface emitting laser grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a record low threshold current density of 2.6 kA/cm/sup 2/.
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW
2001-01-01
170330 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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