We fabricated a 1200 nm range GaInNAs/GaAs quantum wells vertical cavity surface emitting laser grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a record low threshold current density of 2.6 kA/cm/sup 2/.


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    Titel :

    Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW


    Beteiligte:
    Makino, S. (Autor:in) / Miyamoto, T. (Autor:in) / Kageyarna, T. (Autor:in) / Ikenaga, Y. (Autor:in) / Nishiyama, N. (Autor:in) / Matsutani, A. (Autor:in) / Koyama, F. (Autor:in) / Iga, K. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    170330 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Room Temperature Continuos-Wave Operation of GaInN-As/GaAs VCSELs Grown by Chemical Beam Epitaxy with Output Power Exceeding 1mW

    Makino, S. / Miyamoto, T. / Kageyama, T. et al. | British Library Conference Proceedings | 2001


    Continuous wave operation of GaInNAs laser diode at room temperature

    Kondow, M. / Nakatsuka, S. / Kitatani, T. et al. | IEEE | 1996


    Continuous Wave Operation of GaInNAs Laser Diode at Room Temperature

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    GaInNAs quantum well VCSELs

    Steinle, G. / Ramakrishnan, A. / Supper, D. et al. | IEEE | 2002


    GaInNAs/GaAs Long Wavelength VCSELs-Design and Expected Characteristics

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997