A non-absorbing window-structure formed by solid phase diffusion has been employed to AlGaInP visible laser diodes with a multi-quantum barrier(MQB) and a strained active layer for the first time. Maximum output power density over 18MW/cm /sup 2/ without optical damage and stable operation under 40-50mW CW conditions are demonstrated.
High-power AlGaInP visible laser diodes with a non-absorbing window-structure
1992-01-01
124122 byte
Conference paper
Electronic Resource
English
High-Power AlGaInP Visible Laser Diodes with a Non-Absorbing Window-Structure
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