A non-absorbing window-structure formed by solid phase diffusion has been employed to AlGaInP visible laser diodes with a multi-quantum barrier(MQB) and a strained active layer for the first time. Maximum output power density over 18MW/cm /sup 2/ without optical damage and stable operation under 40-50mW CW conditions are demonstrated.


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    Title :

    High-power AlGaInP visible laser diodes with a non-absorbing window-structure


    Contributors:
    Kamizato, T. (author) / Arimoto, S. (author) / Watanabe, H. (author) / Kadoiwa, K. (author) / Omura, E. (author) / Kakimoto, S. (author) / Ikeda, K. (author)


    Publication date :

    1992-01-01


    Size :

    124122 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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