A non-absorbing window-structure formed by solid phase diffusion has been employed to AlGaInP visible laser diodes with a multi-quantum barrier(MQB) and a strained active layer for the first time. Maximum output power density over 18MW/cm /sup 2/ without optical damage and stable operation under 40-50mW CW conditions are demonstrated.


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    Titel :

    High-power AlGaInP visible laser diodes with a non-absorbing window-structure


    Beteiligte:
    Kamizato, T. (Autor:in) / Arimoto, S. (Autor:in) / Watanabe, H. (Autor:in) / Kadoiwa, K. (Autor:in) / Omura, E. (Autor:in) / Kakimoto, S. (Autor:in) / Ikeda, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1992


    Format / Umfang :

    124122 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Power AlGaInP Visible Laser Diodes with a Non-Absorbing Window-Structure

    Kamizato, T. / Arimoto, S. / Watanabe, H. et al. | British Library Conference Proceedings | 1992


    Strained Quantum Well AlGaInP Visible Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Strained quantum well AlGaInP visible laser diodes

    Honda, S. / Shono, M. / Yodoshi, K. et al. | IEEE | 1994


    Long-term operation reliability of AlGaInP visible laser diodes

    Kobayashi, K. / Hotta, H. / Endo, K. | IEEE | 1994


    Long Term Operation Reliability of AlGaInP Visible Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994