Visible light emitting semiconductor lasers have become increasingly attractive as light sources in various applications such as data storage, bar-code readers, laser-printers and solid laser pumping. This article reviews the recent progress of AlGaInP semiconductor lasers emitting in the 630 nm band. Significant improvement of the performance of the lasers over the last several years has been obtained by the replacement of the Ga/sub 0.5/In/sub 0.5/P bulk layer by Ga/sub x/In/sub 1-x/P strained quantum well layers in the active region.


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    Title :

    Progress in AlGaInP strained layer quantum well semiconductor lasers


    Contributors:
    Valster, A. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 313-314 vol.1


    Publication date :

    1994-01-01


    Size :

    173281 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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