Summary form only given. We have for the first time implemented an optically pumped semiconductor thin-disk laser (OPS-TDL) emitting at visible wavelengths around 660 nm. The gain element is based on the AlGaInP material system, grown lattice-matched on GaAs. The epitaxial structures consist of a resonant periodic gain structure with varying number of periods and stacks of 1 to 4 quantum wells per period.


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    Title :

    High power 660 nm optically pumped semiconductor thin-disk lasers


    Contributors:
    Linder, N. (author) / Karnutsch, C. (author) / Luft, J. (author) / Muller, M. (author) / Schmid, W. (author) / Streubel, K. (author) / Beyertt, S.-S. (author) / Giesen, A. (author) / Dohler, G.H. (author)


    Publication date :

    2002-01-01


    Size :

    102050 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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