Summary form only given. We have for the first time implemented an optically pumped semiconductor thin-disk laser (OPS-TDL) emitting at visible wavelengths around 660 nm. The gain element is based on the AlGaInP material system, grown lattice-matched on GaAs. The epitaxial structures consist of a resonant periodic gain structure with varying number of periods and stacks of 1 to 4 quantum wells per period.


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    Titel :

    High power 660 nm optically pumped semiconductor thin-disk lasers


    Beteiligte:
    Linder, N. (Autor:in) / Karnutsch, C. (Autor:in) / Luft, J. (Autor:in) / Muller, M. (Autor:in) / Schmid, W. (Autor:in) / Streubel, K. (Autor:in) / Beyertt, S.-S. (Autor:in) / Giesen, A. (Autor:in) / Dohler, G.H. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    102050 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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