We demonstrate that it is possible to create a mid-infrared laser structure which is free of aluminum by using GaSb as the optical cladding material in an integrated absorber laser structure. Based on previously published data at shorter wavelengths, the refractive index of the InGaAsSb used in the IA QW laser structures is extrapolated to be higher than that of GaSb This index step is an order of magnitude smaller than when using the more conventional AlAsSb as the optical cladding.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-performance, aluminum-free optically-pumped mid-IR semiconductor lasers


    Beteiligte:
    Goyal, A.K. (Autor:in) / Turner, G.W. (Autor:in) / Manfra, M.J. (Autor:in) / Foti, P.J. (Autor:in) / O'Brien, P. (Autor:in) / Sanchez, A. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    188161 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    High power widely tunable optically pumped semiconductor lasers

    Bai, Yanbo / Xu, Zuntu / Weiss, Eli et al. | British Library Conference Proceedings | 2019


    High Performance Optically-Pumped Type-II Antimonide Lasers

    IEEE | British Library Conference Proceedings | 2003


    High performance optically-pumped type-II antimonide lasers

    Kaspi, R. / Ongstad, A.P. / Dente, G.C. et al. | IEEE | 2003


    High power 660 nm optically pumped semiconductor thin-disk lasers

    Linder, N. / Karnutsch, C. / Luft, J. et al. | IEEE | 2002