In this article, we demonstrate the ability to create heterojunctions of p-type Li/sub 0.15/Ni/sub 0.85/O (LNO) and n-type ZnO films deposited by pulsed laser deposition (PLD) on sapphire and MgO substrate, using Pt contacts on the LNO film, which represents a combination of transparent conducting oxides (TCOs) with simple crystal structures to fabricate transparent p-n junction. This looks to be a promising approach for realizing low-cost transparent junctions.


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    Title :

    Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li/sub 0.15/Ni/sub 0.85/O and n-ZnO films for UV-detector applications


    Contributors:
    Zhuang, L. (author) / Wong, K.H. (author)


    Publication date :

    2005-01-01


    Size :

    192331 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English