We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.


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    Title :

    Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers


    Contributors:
    Weigl, B. (author) / Reiner, G. (author) / Grabherr, M. (author) / Ebeling, K.J. (author)


    Publication date :

    1996-01-01


    Size :

    174361 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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