We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.
Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers
01.01.1996
174361 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Highly Efficient Selectively Oxidized GaAs (lambda-830nm) Vertical-Cavity Lasers
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