We report for the first time femtosecond optically excited terahertz pulse emission from indium nitride (InN). MBE-grown InN is a novel electronic material. The THz emission from InN is strong compared to previously investigated semiconductors.


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    Title :

    Pulsed terahertz emission from indium nitride thin films


    Contributors:
    Ascazubi, R. (author) / Wilke, I. (author) / Denniston, K. (author) / Lu, H. (author) / Schaff, W.J. (author)


    Publication date :

    2004-01-01


    Size :

    138398 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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