We report the first demonstration of CW operation of GaAsP/GaAs/GaAsSb QW lasers above room temperatures and show that the strain compensation improves the overall device performance


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Above room temperature CW edge-emitting lasers with GaAsP/GaAs/GaAsSb active regions


    Contributors:
    Yu, S.-Q. (author) / Jin, X. (author) / Cao, Y. (author) / Ding, D. (author) / Wang, J.-B. (author) / Johnson, S.R. (author) / Zhang, Y.-H. (author) / Dowd, P. (author) / Adamcyk, M. (author) / Chaparro, S.A. (author)


    Publication date :

    2004-01-01


    Size :

    125298 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    On the Thermal Stability of 1.3mum GaAsSb/GaAs-based Lasers

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    GaAsSb-(In)GaAsN Type-II Quantum-Well Lasers on GaAs Substrate

    IEEE | British Library Conference Proceedings | 2003


    Frequency-Doubled GaAsSb/GaAs Semiconductor Disk Laser Emitting at 589nm

    IEEE | British Library Conference Proceedings | 2003


    GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate

    Tansu, N. / Mawst, L.J. / Vurgaftman, I. et al. | IEEE | 2003


    Interdiffused AlGaAs/GaAsP quantum well lasers

    Chan, K. S. / Chan, M. C. Y. / Optical Society of America | British Library Conference Proceedings | 1998