We present room temperature photoluminescence studies of InGaAs single quantum wells grown on top of In/sub 0/spl rarr/x/Ga/sub 1/spl rarr/(1-x)/As graded buffers (0.05


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Room temperature photoluminescence of MBE grown single quantum wells on InGaAs graded buffers


    Contributors:


    Publication date :

    2004-01-01


    Size :

    207858 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Piezoelectric Effect in InGaAs/GaAs Quantum Wells Grown on (111)A GaAs Observed by Photoluminescence Spectroscopy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Influence of the Cap Layer Thickness on Photoluminescence Properties in Strained InGaAs/GaAs Single Quantum Wells

    Shen, W. Z. / Tang, W. G. / Shen, S. C. et al. | British Library Online Contents | 1994


    Femtosecond All-Optical AND Gates Based on Low-Temperature-Grown Be-Doped Strained InGaAs/InAlAs Multiple Quantum Wells

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition [3556-31]

    Song, X. / Qu, Y. / Li, M. et al. | British Library Conference Proceedings | 1998


    Room temperature operation of MBE self-organized InGaAs quantum dot lasers

    Kamath, K. / Phillips, J. / Sosnovski, T. et al. | IEEE | 1996