We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.
Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
400679 byte
Conference paper
Electronic Resource
English
InGaAs Quantum Dots-in-a-Well Photodetectors Grown by Metal Organic Chemical Vapor Deposition
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