We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.


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    Titel :

    Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy


    Beteiligte:
    Elarde, V.C. (Autor:in) / Swint, R.B. (Autor:in) / Yeoh, T.S. (Autor:in) / Coleman, J.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    400679 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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