The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the quantum-dots-in-a-well (DWell) structure are reported.
InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition
01.01.2005
145607 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InGaAs Quantum Dots-in-a-Well Photodetectors Grown by Metal Organic Chemical Vapor Deposition
British Library Conference Proceedings | 2005
|British Library Conference Proceedings | 2005
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