50 W peak-power was demonstrated from 2-mm-long, 100-/spl mu/m-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm/sup -1/ and internal efficiencies of 0.90.
50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
132600 byte
Conference paper
Electronic Resource
English
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