50 W peak-power was demonstrated from 2-mm-long, 100-/spl mu/m-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm/sup -1/ and internal efficiencies of 0.90.


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    Title :

    50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers


    Contributors:
    Martinelli, R.U. (author) / Li, J. (author) / Khalfin, V. (author) / Braun, A.M. (author) / Willner, B.L. (author) / Harvey, M. (author) / Shellenbarger, Z. (author) / Abeles, J.H. (author)


    Publication date :

    2004-01-01


    Size :

    132600 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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