We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PlN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.


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    Title :

    High sensitivity silicon-based VIS/NIR photodetectors


    Contributors:
    Carey, J.E. (author) / Mazur, E. (author)


    Publication date :

    2004-01-01


    Size :

    122422 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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