We fabricate silicon-based photodiodes using a simple femtosecond-laser microstructuring technique. The detectors are ten times more sensitive than commercial silicon PlN photodiodes at visible wavelengths and can be used at wavelengths up to 1650 nm.
High sensitivity silicon-based VIS/NIR photodetectors
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
01.01.2004
122422 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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