Integrated semiconductor ring lasers with 1-cm cavity length are fabricated and characterized. Directional switching is observed and a pumped S-section is used to suppress it. The lasing threshold is identified by differential I-V measurements.


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    Title :

    Semiconductor ring lasers with large ring cavity: Directional switching and electrical diagnostics


    Contributors:
    Hongjun Cao, (author) / Hai Ling, (author) / Chiyu Lhi, (author) / Hui Deng, (author) / Yan Li, (author) / Eliseev, P.G. (author) / Osinski, M. (author) / Peake, G.M. (author)


    Publication date :

    2004-01-01


    Size :

    117984 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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