Integrated semiconductor ring lasers with 1-cm cavity length are fabricated and characterized. Directional switching is observed and a pumped S-section is used to suppress it. The lasing threshold is identified by differential I-V measurements.
Semiconductor ring lasers with large ring cavity: Directional switching and electrical diagnostics
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 3 pp. vol.2
2004-01-01
117984 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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