Integrated semiconductor ring lasers with 1-cm cavity length are fabricated and characterized. Directional switching is observed and a pumped S-section is used to suppress it. The lasing threshold is identified by differential I-V measurements.


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    Titel :

    Semiconductor ring lasers with large ring cavity: Directional switching and electrical diagnostics


    Beteiligte:
    Hongjun Cao, (Autor:in) / Hai Ling, (Autor:in) / Chiyu Lhi, (Autor:in) / Hui Deng, (Autor:in) / Yan Li, (Autor:in) / Eliseev, P.G. (Autor:in) / Osinski, M. (Autor:in) / Peake, G.M. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    117984 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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