This work performs a cross-sectional TEM study of holes in Si using a femtosecond laser, and observes the structure directly. Under bright-field TEM mode, a 20 to 30 nm thick amorphous layer on the silicon surface inside the hole is observed. Furthermore, an electron dispersive X-ray study proves that this layer does not contain oxygen.
Direct TEM observation of amorphous Si created by femtosecond laser irradiation
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
2004-01-01
184696 byte
Conference paper
Electronic Resource
English
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