This work performs a cross-sectional TEM study of holes in Si using a femtosecond laser, and observes the structure directly. Under bright-field TEM mode, a 20 to 30 nm thick amorphous layer on the silicon surface inside the hole is observed. Furthermore, an electron dispersive X-ray study proves that this layer does not contain oxygen.


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    Title :

    Direct TEM observation of amorphous Si created by femtosecond laser irradiation


    Contributors:
    Ming Li, (author) / Jia, J. (author) / Thompson, C.V. (author)


    Publication date :

    2004-01-01


    Size :

    184696 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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