This work performs a cross-sectional TEM study of holes in Si using a femtosecond laser, and observes the structure directly. Under bright-field TEM mode, a 20 to 30 nm thick amorphous layer on the silicon surface inside the hole is observed. Furthermore, an electron dispersive X-ray study proves that this layer does not contain oxygen.


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    Titel :

    Direct TEM observation of amorphous Si created by femtosecond laser irradiation


    Beteiligte:
    Ming Li, (Autor:in) / Jia, J. (Autor:in) / Thompson, C.V. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    184696 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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