We report on the performance of 4 element 850 nm top surface emitting linear VCSEL arrays with spacing of 30 /spl mu/m. These devices have been fabricated by a fully planar process combining an implanted aperture structure with a field isolation implant to achieve electrical isolation between emitters. Implant apertures are 15 /spl mu/m in diameter, with 11 /spl mu/m metal openings. The epitaxial layer structure within which this structure was grown is similar to that reported recently to have achieved outstanding efficiencies in implanted device structures at 850 nm.


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    Title :

    High density, high power arrays of vertical cavity surface emitting lasers operating at 850 nm


    Contributors:
    Zou, Y. (author) / Thornton, R. (author) / Tramontana, J. (author) / Hibbs-Brenner, M. (author) / Morgan, R. (author)


    Publication date :

    1995-01-01


    Size :

    141996 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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