We report on the performance of 4 element 850 nm top surface emitting linear VCSEL arrays with spacing of 30 /spl mu/m. These devices have been fabricated by a fully planar process combining an implanted aperture structure with a field isolation implant to achieve electrical isolation between emitters. Implant apertures are 15 /spl mu/m in diameter, with 11 /spl mu/m metal openings. The epitaxial layer structure within which this structure was grown is similar to that reported recently to have achieved outstanding efficiencies in implanted device structures at 850 nm.


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    Titel :

    High density, high power arrays of vertical cavity surface emitting lasers operating at 850 nm


    Beteiligte:
    Zou, Y. (Autor:in) / Thornton, R. (Autor:in) / Tramontana, J. (Autor:in) / Hibbs-Brenner, M. (Autor:in) / Morgan, R. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    141996 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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