We report a low Ith (/spl sim/1.5 mA), high power (>5 mW) and speed performance (10 Gb/s operation) single mode GaAs VCSEL employing O+ implantation, MOCVD re-growth and selective oxidation.


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    Title :

    High speed modulation of large-area single-transverse-mode vertical-cavity surface-emitting


    Contributors:
    Tao-Hung Hsueh, (author) / Hao-Chung Kuo, (author) / Fang-I Lai, (author) / Li-Hung Lai, (author) / Wang, S.C. (author)


    Publication date :

    2003-01-01


    Size :

    225947 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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