We report a low Ith (/spl sim/1.5 mA), high power (>5 mW) and speed performance (10 Gb/s operation) single mode GaAs VCSEL employing O+ implantation, MOCVD re-growth and selective oxidation.
High speed modulation of large-area single-transverse-mode vertical-cavity surface-emitting
2003-01-01
225947 byte
Conference paper
Electronic Resource
English
High performance large-area single-mode vertical-cavity surface-emitting lasers
British Library Conference Proceedings | 2003
|Transverse mode selection in external cavity vertical-cavity surface-emitting lasers
British Library Conference Proceedings | 1996
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