The III-V semiconductor system AlGaInP is today the only material suitable for the fabrication of high-brightness LEDs in the yellow to red color range. In this paper, we will compare a number of new approaches for high-brightness LEDs, including the thin-film technology. The discussion will include the potential of various approaches as well as their benefits and drawbacks.
Novel technologies for high-brightness AlGaInP LEDs
2003-01-01
69263 byte
Conference paper
Electronic Resource
English
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