The III-V semiconductor system AlGaInP is today the only material suitable for the fabrication of high-brightness LEDs in the yellow to red color range. In this paper, we will compare a number of new approaches for high-brightness LEDs, including the thin-film technology. The discussion will include the potential of various approaches as well as their benefits and drawbacks.
Novel technologies for high-brightness AlGaInP LEDs
01.01.2003
69263 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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