The III-V semiconductor system AlGaInP is today the only material suitable for the fabrication of high-brightness LEDs in the yellow to red color range. In this paper, we will compare a number of new approaches for high-brightness LEDs, including the thin-film technology. The discussion will include the potential of various approaches as well as their benefits and drawbacks.


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    Titel :

    Novel technologies for high-brightness AlGaInP LEDs


    Beteiligte:
    Streubel, K. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    69263 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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