We present the first lattice-matched InGaAs quantum well lasers with barriers and waveguide grown using a digital alloy MBE technique. By rapidly switching the ternaries of AlInAs and InGaAs, the digital alloy process permits the growth of any quaternary AlGaInAs composition.


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    Title :

    1.59 /spl mu/m lattice-matched AlGaInAs-InGaAs-InP lasers with digital alloy barrier and waveguide layers


    Contributors:
    Liu, G.T. (author) / Stintz, A. (author) / Pease, E.A. (author) / Newell, T.C. (author) / Malloy, K.J. (author) / Lester, L.F. (author)


    Publication date :

    1998-01-01


    Size :

    166907 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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