We present the first lattice-matched InGaAs quantum well lasers with barriers and waveguide grown using a digital alloy MBE technique. By rapidly switching the ternaries of AlInAs and InGaAs, the digital alloy process permits the growth of any quaternary AlGaInAs composition.
1.59 /spl mu/m lattice-matched AlGaInAs-InGaAs-InP lasers with digital alloy barrier and waveguide layers
1998-01-01
166907 byte
Conference paper
Electronic Resource
English
1.59 m Lattice-Matched AlGaInAs/InGaAs/InP Lasers with Digital Alloy Barrier and Waveguide Layers
British Library Conference Proceedings | 1998
|Reverse-Mesa Ridge Waveguide Long Wavelength AlGaInAs/InP Multiple Quantum Well Lasers
British Library Conference Proceedings | 1998
|Temperature performance of AlGaInAs semiconductor lasers
IEEE | 2001
|High-temperature operation of AlGaInAs/InP lasers
British Library Online Contents | 1996
|