We present the first lattice-matched InGaAs quantum well lasers with barriers and waveguide grown using a digital alloy MBE technique. By rapidly switching the ternaries of AlInAs and InGaAs, the digital alloy process permits the growth of any quaternary AlGaInAs composition.


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    Titel :

    1.59 /spl mu/m lattice-matched AlGaInAs-InGaAs-InP lasers with digital alloy barrier and waveguide layers


    Beteiligte:
    Liu, G.T. (Autor:in) / Stintz, A. (Autor:in) / Pease, E.A. (Autor:in) / Newell, T.C. (Autor:in) / Malloy, K.J. (Autor:in) / Lester, L.F. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    166907 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    High-temperature operation of AlGaInAs/InP lasers

    Zah, C. E. / Bhat, R. / Lee, T. P. | British Library Online Contents | 1996