Control of electronic spins in individual InGaAs quantum dots is achieved by applying vertical electric and magnetic fields. In addition, dots with anomalously large degree of linear polarization are found weakly affected by magnetic field.


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    Title :

    Spin-memory and anomalous polarization properties of single InGaAs/GaAs quantum dots


    Contributors:


    Publication date :

    2005-01-01


    Size :

    668583 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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