Control of electronic spins in individual InGaAs quantum dots is achieved by applying vertical electric and magnetic fields. In addition, dots with anomalously large degree of linear polarization are found weakly affected by magnetic field.


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    Titel :

    Spin-memory and anomalous polarization properties of single InGaAs/GaAs quantum dots


    Beteiligte:
    Ebbens, A. (Autor:in) / Krizhanovskii, D.N. (Autor:in) / Tartakovskii, A.I. (Autor:in) / Pulizzi, F. (Autor:in) / Saveliev, A.V. (Autor:in) / Wright, T. (Autor:in) / Skolnick, M.S. (Autor:in) / Hopkinson, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    668583 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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