Control of electronic spins in individual InGaAs quantum dots is achieved by applying vertical electric and magnetic fields. In addition, dots with anomalously large degree of linear polarization are found weakly affected by magnetic field.
Spin-memory and anomalous polarization properties of single InGaAs/GaAs quantum dots
2005 Quantum Electronics and Laser Science Conference ; 1 ; 317-319 Vol. 1
01.01.2005
668583 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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