The study in lengthened photoluminescent lifetime of the silicon-implanted borosilicate glass from 1.7 ns to 2.8 ns after low-temperature annealing reveals that the decrease in NBOHC defect density with activation energy of 2.63 eV is up to one order of magnitude.
Continuous-wave and time-resolved photoluminescence analysis of defect density evolution in silicon implanted borosilicate glass
2003-01-01
24596 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2003
|BOROSILICATE GLASS, LAMINATED GLASS, AND WINDOW GLASS FOR VEHICLE
European Patent Office | 2022
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