The study in lengthened photoluminescent lifetime of the silicon-implanted borosilicate glass from 1.7 ns to 2.8 ns after low-temperature annealing reveals that the decrease in NBOHC defect density with activation energy of 2.63 eV is up to one order of magnitude.


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    Title :

    Continuous-wave and time-resolved photoluminescence analysis of defect density evolution in silicon implanted borosilicate glass


    Contributors:


    Publication date :

    2003-01-01


    Size :

    24596 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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